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希望计算CdSe半导体的band gap,添加三维周期性条件后得到的为0.64eV,扩大晶胞变化也不是很大。请问老师是什么参数设置错了吗?输入文件如下
&GLOBAL
PROJECT CdSe-pdos
RUN_TYPE ENERGY
PRINT_LEVEL MEDIUM
&END GLOBAL
&FORCE_EVAL
METHOD Quickstep
STRESS_TENSOR ANALYTICAL
&DFT
BASIS_SET_FILE_NAME BASIS_MOLOPT
POTENTIAL_FILE_NAME GTH_POTENTIALS
&QS
WF_INTERPOLATION ASPC
EXTRAPOLATION_ORDER 1
&END QS
&MGRID
CUTOFF 400
&END MGRID
&POISSON
PERIODIC XYZ
POISSON_SOLVER PERIODIC
&END POISSON
&SCF
SCF_GUESS ATOMIC
EPS_SCF 1.0E-6
MAX_SCF 300
&OT T
PRECONDITIONER FULL_SINGLE_INVERSE
MINIMIZER DIIS
LINESEARCH 3PNT
&END OT
&END SCF
&XC
&XC_FUNCTIONAL PBE
&END XC_FUNCTIONAL
&END XC
&PRINT
&MO_CUBES
WRITE_CUBE F
NHOMO 5
NLUMO 5
&END MO_CUBES
&PDOS
NLUMO 5
&END
&END PRINT
&END DFT
&SUBSYS
&CELL
ABC [angstrom] 6.050000 6.050000 6.050000
PERIODIC XYZ
MULTIPLE_UNIT_CELL 1 1 1
&END CELL
&TOPOLOGY
MULTIPLE_UNIT_CELL 1 1 1
&END TOPOLOGY
&COORD
SCALED
Se 0.25000 0.25000 0.25000
Se 0.75000 0.75000 0.25000
Se 0.75000 0.25000 0.75000
Se 0.25000 0.75000 0.75000
Cd 0.00000 0.00000 0.00000
Cd 0.00000 0.50000 0.50000
Cd 0.50000 0.00000 0.50000
Cd 0.50000 0.50000 0.00000
&END
&KIND Cd
ELEMENT Cd
BASIS_SET DZVP-MOLOPT-SR-GTH
POTENTIAL GTH-PBE-q12
&END KIND
&KIND Se
ELEMENT Se
BASIS_SET DZVP-MOLOPT-SR-GTH
POTENTIAL GTH-PBE-q6
&END KIND
&END SUBSYS
&END FORCE_EVAL
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